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IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 1 rev. a 03/13/00 issi reserves the right to make changes to its products at any time without notice in order to improve design and supply the be st possible product. we assume no responsibility for any errors which may appear in this publication. ? copyright 2000, integrated silicon solution, inc. features ? clock frequency: 125 mhz, 100 mhz, 83 mhz two banks can be operated simultaneously and independently single 3.3v power supply lvttl interface programmable burst length ? (1, 2, 4, 8, full page) programmable burst sequence: sequential/interleave auto refresh, self refresh 1k refresh cycles every 16 ms random column address every clock cycle programmable cas latency (2, 3 clocks) burst read/write and burst read/single write operations capability byte controlled by ldqm and udqm package 400-mil 50-pin tsop ii description issi's 4mb synchronous dram IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance. the synchronous drams achieve high-speed data transfer using pipeline architecture. all inputs and outputs signals refer to the rising edge of the clock input. 128k words x 16 bits x 2 banks (4-mbit) synchronous dynamic ram pin configurations 50-pin tsop (type ii) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 vcc i/o0 i/o1 gndq i/o2 i/o3 vccq i/o4 i/o5 gndq i/o6 i/o7 vccq ldqm we cas ras cs a9 a8 a0 a1 a2 a3 vcc gnd i/o15 i/o14 gndq i/o13 i/o12 vccq i/o11 i/o10 gndq i/o9 i/o8 vccq nc udqm clk cke nc nc nc a7 a6 a5 a4 gnd february 2000 pin descriptions a0-a9 address input a0-a8 row address input a9 bank select address a0-a7 column address input i/o0 to i/o15 data i/o clk system clock input cke clock enable cs chip select ras row address strobe command cas column address strobe command we write enable ldqm lower bye, input/output mask udqm upper bye, input/output mask vcc power gnd ground vccq power supply for i/o pin gndq ground for i/o pin nc no connection ordering information commercial range: 0 ? ? ? ? ? c to 70 ? ? ? ? ? c frequency speed (ns) order part no. package 125 mhz 8 IS42S16128-8t 400-mil tsop ii 100 mhz 10 IS42S16128-10t 400-mil tsop ii 83 mhz 12 IS42S16128-12t 400-mil tsop ii
2 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? pin functions pin no. symbol type function (in detail) 20 to 24, a0-a8 input pin a0 to a8 are address inputs. a0-a8 are used as row address inputs during active 27 to 30 command input and a0-a7 as column address inputs during read or write command input. a8 is also used to determine the precharge mode during other commands. if a8 is low during precharge command, the bank selected by a9 is precharged, but if a8 is high, both banks will be precharged. when a8 is high in read or write command cycle, the precharge starts automati- cally after the burst access. these signals become part of the op code during mode register set command input. 19 a9 input pin a9 is the bank selection signal. when a9 is low, bank 0 is selected and when high, bank 1 is selected. this signal becomes part of the op code during mode register set command input. 16 cas input pin cas , in conjunction with the ras and we , forms the device command. see the "command truth table" item for details on device commands. 34 cke input pin the cke input determines whether the clk input is enabled within the device. when is cke high, the next rising edge of the clk signal will be valid, and when low, invalid. when cke is low, the device will be in either the power-down mode, the clock suspend mode, or the self refresh mode. the cke is an asynchronous i nput. 35 clk input pin clk is the master clock input for this device. except for cke, all inputs to this device are acquired in synchronization with the rising edge of this pin. 18 cs input pin the cs input determines whether command input is enabled within the device. command input is enabled when cs is low, and disabled with cs is high. the device remains in the previous state when cs is high. 2, 3, 5, 6, 8, 9, 11 i/o0 to i/o pin i/o0 to i/o15 are i/o pins. i/o through these pins can be controlled in byte units 12, 39, 40, 42, 43, i/o15 using the ldqm and udqm pins. 45, 46, 48, 49 14, 36 ldqm, input pin ldqm and udqm control the lower and upper bytes of the i/o buffers. in read udqm mode, ldqm and udqm control the output buffer. when ldqm or udqm is low, the corresponding buffer byte is enabled, and when high, disabled. the outputs go to the high impedance state when ldqm/udqm is high. this function corre- sponds to oe in conventional drams. in write mode, ldqm and udqm control the input buffer. when ldqm or udqm is low, the corresponding buffer byte is enabled, and data can be written to the device. when ldqm or udqm is high, input data is masked and cannot be written to the device. 17 ras input pin ras , in conjunction with cas and we , forms the device command. see the "command truth table" item for details on device commands. 15 we input pin we , in conjunction with ras and cas , forms the device command. see the "command truth table" item for details on device commands. 7, 13, 38, 44 v cc q power supply pin v cc q is the output buffer power supply. 1, 25 v cc power supply pin v cc is the device internal power supply. 4, 10, 41, 47 gndq power supply pin gndq is the output buffer ground. 26, 50 gnd power supply pin gnd is the device internal ground.
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 3 rev. a 03/13/00 functional block diagram clk cke cs ras cas we a9 a7 a6 a5 a4 a3 a2 a1 a0 a8 command decoder & clock generator mode register refresh controller refresh counter self refresh controller row address latch multiplexer row address buffer row address buffer column address latch burst counter column address buffer row decoder row decoder memory cell array bank 0 column decoder memory cell array bank 1 data i n buffer data out buffer sense amp i/o gate sense amp i/o gate 512 512 dqm i/o 0-15 vcc/vccq gnd/gndq 9 9 9 9 8 9 9 8 16 16 16 16 256x16 256x16
4 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? absolute maximum ratings (1) symbol parameters rating unit v cc max maximum supply voltage ? 1.0 to +4.6 v vccq max maximum supply voltage for output buffer ? 1.0 to +4.6 v v in input voltage ? 1.0 to +5.5 v v out output voltage ? 1.0 to +4.6 v p d max allowable power dissipation 1 w i cs output shorted current 50 ma t opr operating temperature 0 to +70 c t stg storage temperature ? 55 to +150 c dc recommended operating conditions at t a = 0 to +70 c (2) symbol parameter min. typ. max. unit v cc , v cc q supply voltage 3.0 3.3 3.6 v v ih input high voltage 2.0 ? 5.5 v v il input low voltage ? 0.3 ? +0.8 v note: 1. stress greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. all voltages are referenced to gnd. 3. v ih (max) = 5.5v for pulse width - 5 ns. 3. v il (min) = ? 1.0v for pulse width - 5 ns. capacitance characteristics at t a = 0 to +25 c, vcc = vccq = 3.3 0.3v, f = 1 mhz (1,2) symbol parameter typ. max. unit c in 1 input capacitance: a0-a9 ? 5pf c in 2 input capacitance: (clk, cke, cs , ras , cas , we , ldqm, udqm) ? 5pf ci/o data input/output capacitance: i/o0-i/o15 ? 7pf
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 5 rev. a 03/13/00 dc electrical characteristics (recommended operation conditions unless otherwise noted.) symbol parameter test condition speed min. max. unit i il input leakage current 0v v in v cc , with pins other than ? 10 10 a the tested pin at 0v i ol output leakage current output is disabled ? 10 10 a 0v v out v cc v oh output high voltage level i out = ? 2 ma 2.4 ? v v ol output low voltage level i out = +2 ma ? 0.4 v i cc 1 operating current (1,2) one bank operation, burst length=1 ? 100 ma t rc t rc (min.), i out = 0ma i cc 2p precharge standby current cke v il ( max )t ck = t ck ( min ) ?? 3ma i cc 2ps (in power-down mode) t ck = ?? 2ma i cc 2n precharge standby current cke v ih ( min )t ck = t ck ( min ) ?? 30 ma i cc 2ns (in non power-down mode) t ck = ?? 15 ma i cc 3p active standby current cke v il ( max )t ck = t ck ( min ) ?? 3ma i cc 3ps (in power-down mode) t ck = ?? 2ma i cc 3n active standby current cke v ih ( min )t ck = t ck ( min ) ?? 30 ma i cc 3ns (in non power-down mode) t ck = ?? 15 ma i cc 4 operating current t ck = t ck ( min ) cas latency = 3 -8 ? 160 ma (in burst mode) (1) i out = 0ma -10 ? 160 ma -12 ? 120 ma cas latency = 2 -8 ? 120 ma -10 ? 120 ma -12 ? 110 ma i cc 5 auto-refresh current t rc = t rc ( min )-8 ? 100 ma -10 ? 100 ma -12 ? 80 ma i cc 6 self-refresh current cke 0.2v ?? 2ma notes: 1. these are the values at the minimum cycle time. since the currents are transient, these values decrease as the cycle time inc reases. also note that a bypass capacitor of at least 0.01 f should be inserted between vcc and gnd for each memory chip to suppres s power supply voltage noise (voltage drops) due to these transient currents. 2. icc1 and icc4 depend on the output load. the maximum values for icc1 and icc4 are obtained with the output open state.
6 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? ac characteristics (1,2,3) -8 -10 -12 symbol parameter min. max. min. max. min. max. units t ck 3 clock cycle time cas latency = 3 8 ? 10 ? 12 ? ns t ck 2 cas latency = 2 13 ? 15 ? 17 ? ns t ac 3 access time from clk (4) cas latency = 3 ? 6 ? 8 ? 10 ns t ac 2 cas latency = 2 ? 10 ? 13 ? 15 ns t chi clk high level width 3 ? 4 ? 4.5 ? ns t cl clk low level width 3 ? 4 ? 4.5 ? ns t oh 3 output data hold time cas latency = 3 3 ? 4 ? 4 ? ns t oh 2 cas latency = 2 3 ? 4 ? 4 ? ns t lz output low impedance time 0 ? 0 ? 0 ? ns t hz 3 output high impedance time (5) cas latency = 3 3648410ns t hz 2 cas latency = 2 3 10 4 12 4 14 ns t ds input data setup time 2 ? 3 ? 3 ? ns t dh input data hold time 1 ? 1.5 ? 2 ? ns t as address setup time 2 ? 3 ? 3 ? ns t ah address hold time 1 ? 1.5 ? 2 ? ns t cks cke setup time 2 ? 3 ? 3 ? ns t ckh cke hold time 1 ? 1.5 ? 2 ? ns t cka cke to clk recovery delay time 1clk+3 ? 1clk+3 ? 1clk+3 ? ns t cs command setup time ( cs , ras , cas , we , dqm) 2 ? 3 ? 3 ? ns t ch command hold time ( cs , ras , cas , we , dqm) 1 ? 1.5 ? 2 ? ns t rc command period (ref to ref / act to act) 80 ? 90 ? 108 ? ns t ras command period (act to pre) 54 12,000 60 12,000 72 12,000 ns t rp command period (pre to act) 24 ? 30 ? 34 ? ns t rcd active command to read / write command delay time 24 ? 30 ? 34 ? ns t rrd command period (act [0] to act[1]) 24 ? 30 ? 34 ? ns t dpl 3 input data to precharge cas latency = 3 1clk+8 ? 1clk+10 ? 1clk+12 ? ns command delay time t dpl 2 cas latency = 2 8 ? 10 ? 12 ? ns t dal 3 input data to active / refresh cas latency = 3 2clk+24 ? 2clk+30 ? 2clk+34 ? ns command delay time (during auto-precharge) t dal 2 cas latency = 2 1clk+24 ? 1clk+30 ? 1clk+34 ? ns t t transition time 1 30 1 30 1 30 ns t ref refresh cycle time ? 16 ? 16 ? 16 ms notes: 1. when power is first applied, memory operation should be started 100 s after vcc and vccq reach their stipulated voltages. al so note that the power-on sequence must be executed before starting memory operation. 2. measured with t t = 1 ns. 3. the reference level is 1.4 v when measuring input signal timing. rise and fall times are measured between v ih (min.) and v il (max.). 4. access time is measured at 1.4v with the load shown in the figure below. 5. the time t hz (max.) is defined as the time required for the output voltage to transition by 200 mv from v oh (min.) or v ol (max.) when the output is in the high impedance state.
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 7 rev. a 03/13/00 operating frequency / latency relationships -8 -10 -12 symbol parameter min. typ. max. min. typ. max. min. typ. max. units ? clock cycle time 8 10 25 10 15 30 12 17 34 ns ? operating frequency 125 100 40 100 65 33 83 58 29 mhz t cac cas latency 3 2 1 3 2 1 3 2 1 cycle t rcd active command to read/write command delay time 3 2 1 3 2 1 3 2 1 cycle t rac ras latency (t rcd + t cac ) 6 4 2 6 4 2 6 4 2 cycle t rc command period (ref to ref / act to act) 9 5 2 9 6 3 9 7 4 cycle t ras command period (act to pre) 6 3 1 6 4 2 6 5 3 cycle t rp command period (pre to act) 3 2 1 3 2 1 3 2 1 cycle t rrd command period (act[0] to act [1]) 3 2 1 3 2 1 3 2 1 cycle t ccd column command delay time 1 1 1 1 1 1 1 1 1 cycle (read, reada, writ, writa) t dpl input data to precharge command delay time 1 1 1 1 1 1 1 1 1 cycle t dal input data to active/refresh command delay time 4 3 2 4 3 2 4 3 2 cycle (during auto-precharge) t rbd burst stop command to output in high-z delay time 3 2 1 3 2 1 3 2 1 cycle (read) t wbd burst stop command to input in invalid delay time 0 0 0 0 0 0 0 0 0 cycle (write) t rql precharge command to output in high-z delay time 3 2 1 3 2 1 3 2 1 cycle (read) t wdl precharge command to input in invalid delay time 0 0 0 0 0 0 0 0 0 cycle (write) t pql last output to auto-precharge start time (read) ? 2 ? 10 ? 2 ? 10 ? 2 ? 1 0 cycle t qmd dqm to output delay time (read) 2 2 2 2 2 2 2 2 2 cycle t dmd dqm to input delay time (write) 0 0 0 0 0 0 0 0 0 cycle t mcd mode register set to command delay time 2 2 2 2 2 2 2 2 2 cycle ac test conditions (input/output reference level: 1.4v) input output load 2.0v 1.4v 0.8v clk input output t chi t ch t ac t oh t cs t ck t cl 2.0v 1.4v 1.4v 1.4v 0.8v i/o 500 ? +1.4v 50 pf
8 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? commands clk cke high row row bank 1 bank 0 cs ras cas we a0-a7 a8 a9 clk cke high column bank 1 auto precharge no precharge bank 0 cs ras cas we a0-a7 a8 a9 active command read command write command precharge command no-operation command device deselect command don't care clk cke high column auto precharge bank 1 bank 0 cs ras cas we a0-a7 a8 a9 clk cke high bank 1 bank 0 and bank 1 bank 0 or bank 1 no precharge bank 0 cs ras cas we a0-a7 a8 a9 clk cke high cs ras cas we a0-a7 a8 a9 clk cke high cs ras cas we a0-a7 a8 a9
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 9 rev. a 03/13/00 commands (cont.) mode register set command auto-refresh command self-refresh command power down command clock suspend command burst stop command don't care clk cke high cs ras cas we a0-a7 a8 a9 clk cke high cs ras cas we a0-a7 a8 a9 op-code op-code op-code clk cke cs ras cas we a0-a7 a8 a9 clk cke cs ras cas we a0-a7 a8 a9 all banks idle nop nop nop nop clk cke cs ras cas we a0-a7 a8 a9 clk cke cs ras cas we a0-a7 a8 a9 bank(s) active high nop nop nop nop
10 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? mode register set command ( cs , ras , cas , we = low) the IS42S16128 product incorporates a register that defines the device operating mode. this command func- tions as a data input pin that loads this register from the pins a0 to a9. when power is first applied, the stipulated power-on sequence should be executed and then the IS42S16128 should be initialized by executing a mode register set command. note that the mode register set command can be ex- ecuted only when both banks are in the idle state, i.e.., deactivated. another command cannot be executed after a mode register set command until after the passage of the period t mcd , which is the period required for mode register set command execution. active command ( cs , ras = low, cas , we = high) the IS42S16128 includes two banks of 512 rows each. this command selects one of the two banks according to the a9 pin and activates the row selected by the pins a0 to a8. this command corresponds to the fall of the ras signal from high to low in conventional drams. precharge command ( cs , ras , we = low, cas = high) this command starts precharging the bank selected by pins a8 and a9. when a8 is high, both banks are precharged at the same time. when a8 is low, the bank selected by a9 is precharged. after executing this com- mand, the next command for the selected bank(s) is executed after passage of the period t rp , which is the period required for bank precharging. this command corresponds to the ras signal from low to high in conventional drams read command ( cs , cas = low, ras , we = high) this command selects the bank specified by the a9 pin and starts a burst read operation at the start address specified by pins a0 to a7. data is output following cas latency. the selected bank must be activated before executing this command. read command (cont.) when the a8 pin is high, this command functions as a read with auto-precharge command. after the burst read completes, the bank selected by pin a9 is precharged. when the a8 pin is low, the bank selected by the a9 pin remains in the activated state after the burst read com- pletes. write command ( cs , cas , we = low, ras = high) when burst write mode has been selected with the mode register set command, this command selects the bank specified by the a9 pin and starts a burst write operation at the start address specified by pins a0 to a7. this first data must be input to the i/o pins in the cycle in which this command. the selected bank must be activated before executing this command. when a8 pin is high, this command functions as a write with auto-precharge command. after the burst write com- pletes, the bank selected by pin a9 is precharged. when the a8 pin is low, the bank selected by the a9 pin remains in the activated state after the burst write completes. after the input of the last burst write data, the application must wait for the write recovery period (t dpl , t dal ) to elapse according to cas latency. auto-refresh command ( cs , ras , cas = low, we , cke = high) this command executes the auto-refresh operation. the row address and bank to be refreshed are automatically generated during this operation. both banks must be placed in the idle state before executing this command. the stipulated period (t rc ) is required for a single refresh operation, and no other commands can be executed during this period. the device goes to the idle state after the internal refresh operation completes. this command must be executed at least 1024 times every 16 ms. this command corresponds to cbr auto-refresh in con- ventional drams.
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 11 rev. a 03/13/00 self-refresh command ( cs , ras , cas , cke = low, we = high) this command executes the self-refresh operation. the row address to be refreshed, the bank, and the refresh interval are generated automatically internally during this operation. the self-refresh operation is started by drop- ping the cke pin from high to low. the self-refresh operation continues as long as the cke pin remains low and there is no need for external control of any other pins. the self-refresh operation is terminated by raising the cke pin from low to high. the next command cannot be executed until the device internal recovery period (t rc ) has elapsed. after the self-refresh, since it is impossible to determine the address of the last row to be refreshed, an auto-refresh should immediately be performed for all addresses (1024 cycles). both banks must be placed in the idle state before executing this command. burst stop command ( cs , we , = low, ras , cas = high) the command forcibly terminates burst read and write operations. when this command is executed during a burst read operation, data output stops after the cas latency period has elapsed. no operation ( cs , = low, ras , cas , we = high) this command has no effect on the device. device deselect command ( cs = high) this command does not select the device for an object of operation. in other words, it performs no operation with respect to the device. power-down command (cke = low) when both banks are in the idle (inactive) state, or when at least one of the banks is not in the idle (inactive) state, this command can be used to suppress device power dissipation by reducing device internal operations to the absolute minimum. power-down mode is started by drop- ping the cke pin from high to low. power-down mode continues as long as the cke pin is held low. power-down command (cont.) all pins other than the cke pin are invalid and none of the other commands can be executed in this mode. the power-down operation is terminated by raising the cke pin from low to high. the next command cannot be executed until the recovery period (t cka ) has elapsed. since this command differs from the self-refresh com- mand described above in that the refresh operation is not performed automatically internally, the refresh operation must be performed within the refresh period (t ref ). thus the maximum time that power-down mode can be held is just under the refresh cycle time. clock suspend (cke = low) this command can be used to stop the device internal clock temporarily during a read or write cycle. clock suspend mode is started by dropping the cke pin from high to low. clock suspend mode continues as long as the cke pin is held low. all input pins other than the cke pin are invalid and none of the other commands can be executed in this mode. also note that the device internal state is maintained. clock suspend mode is terminated by raising the cke pin from low to high, at which point device operation restarts. the next command cannot be executed until the recovery period (t cka ) has elapsed. since this command differs from the self-refresh com- mand described above in that the refresh operation is not performed automatically internally, the refresh operation must be performed within the refresh period (t ref ). thus the maximum time that clock suspend mode can be held is just under the refresh cycle time.
12 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? command truth table (1,2) cke symbol command n-1 n cs ras cas we dqm a0 a8 a7-a0 i/on mrs mode register set (3,4) hxllllx op code x ref auto-refresh (5) h h l l l h x x x x high-z sref self-refresh (5,6) hllllhxx x x high-z pre precharge selected bank h x l l h l x bs l x x pall precharge both banks h x l l h l x x h x x act bank activate (7) h x l l h h x bs row row x writ write h x l h l l x bs l column x writa write with auto-precharge (8) h x l h l l x bs h column x read read (8) h x l h l h x bs l column x reada read with auto-precharge (8) h x l h l h x bs h column x bst burst stop (9) hxlhhlxxxx x nop no operation h x l h h h x x x x x desl device deselect h x h xxxxx x x x sby clock suspend / standby mode l xxxxxxx x x x enb data write / output enable h xxxxxlx x x active mask data mask / output disable h xxxxxhx x x high-z dqm truth table (1,2) cke dqm symbol command n-1 n upper lower enb data write / output enable h x l l mask data mask / output disable h x h h enbu upper byte data write / output enable h x l x enbl lower byte data write / output enable h x x l masku upper byte data mask / output disable h x h x maskl lower byte data mask / output disable h x x h cke truth table (1,2) cke symbol command current state n-1 n cs ras cas we a9 a8 a7-a0 spnd start clock suspend mode active h l xxxxxxx ? clock suspend other states l l xxxxxxx ? terminate clock suspend mode clock suspend l h xxxxxxx ref auto-refresh idle h h l l l h x x x self start self-refresh mode idle h llllhxxx selfx terminate self-refresh mode self-refresh l h l h h h x x x lhhxxxxxx pdwn start power-down mode idle h l l h h h x x x hlhxxxxxx ? terminate power-down mode power-down l h xxxxxxx
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 13 rev. a 03/13/00 operation command table (1,2) current state command operation cs ras cas we a9 a8 a7-a0 idle desl no operation or power-down (12) hxxxxxx nop no operation or power-down (12) lhhhxxx bst no operation or power-down l h h l x x x read / reada illegal l h l h v v v writ/writa illegal l h l l v v v act row active l l h h v v v pre/pall no operation l l h l v v x ref/self auto-refresh or self-refresh (13) lllhxxx mrs mode register set llll op code row active desl no operation h xxxxxx nop no operation l h h h x x x bst no operation l h h l x x x read/reada read start (17) lhlhvvv writ/writa write start (17) lhl lvvv act illegal (10) l lhhvvv pre/pall precharge (15) l lhlvvx ref/self illegal l l l h x x x mrs illegal llll op code read desl burst read continues, row active when done h xxxxxx nop burst read continues, row active when done l h h h x x x bst burst interrupted, row active after interrupt l h h l x x x read/reada burst interrupted, read restart after interrupt (16) lhlhvvv writ/writa burst interrupted write start after interrupt (11,16) lhl lvvv act illegal (10) l lhhvvv pre/pall burst read interrupted, precharge after interrupt l l h l v v x ref/self illegal l l l h x x x mrs illegal llll op code write desl burst write continues, write recovery when done h xxxxxx nop burst write continues, write recovery when done l h h h x x x bst burst write interrupted, row active after interrupt l h h l x x x read/reada burst write interrupted, read start after interrupt (11,16) lhlhvvv writ/writa burst write interrupted, write restart after interrupt (16) lhl lvvv act illegal (10) l lhhvvv pre/pall burst write interrupted, precharge after interrupt l l h l v v x ref/self illegal l l l h x x x mrs illegal llll op code read with desl burst read continues, precharge when done h xxxxxx auto- nop burst read continues, precharge when done l h h h x x x precharge bst illegal l h h l x x x read/reada illegal l h l h v v v writ/writa illegal l h l l v v v act illegal (10) l lhhvvv pre/pall illegal (10) l lhlvvx ref/self illegal l l l h x x x mrs illegal llll op code
14 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? operation command table (1,2) current state command operation cs ras cas we a9 a8 a7-a0 write with desl burst write continues, write recovery and precharge h xxxxxx auto-precharge when done nop burst write continues, write recovery and precharge l h h h x x x bst illegal l h h l x x x read/reada illegal l h l h v v v writ/writa illegal l h l l v v v act illegal (10) l lhhvvv pre/pall illegal (10) l lhlvvx ref/self illegal l l l h x x x mrs illegal llll opcode row precharge desl no operation, idle state after t rp has elapsed h xxxxxx nop no operation, idle state after t rp has elapsed l h h h x x x bst no operation, idle state after t rp has elapsed l h h l x x x read/reada illegal (10) lhlhvvv writ/writa illegal (10) lhl lvvv act illegal (10) l lhhvvv pre/pall no operation, idle state after t rp has elapsed (10) l lhlvvx ref/self illegal l l l h x x x mrs illegal llll op code immediately desl no operation, row active after t rcd has elapsed h xxxxxx following nop no operation, row active after t rcd has elapsed l h h h x x x row active bst no operation, row active after t rcd has elapsed l h h l x x x read/reada illegal (10) lhlhvvv writ/writa illegal (10) lhl lvvv act illegal (10,14) l lhhvvv pre/pall illegal (10) l lhlvvx ref/self illegal l l l h x x x mrs illegal llll op code write desl no operation, row active after t dpl has elapsed h xxxxxx recovery nop no operation, row active after t dpl has elapsed l h h h x x x bst no operation, row active after t dpl has elapsed l h h l x x x read/reada read start l h l h v v v writ/writa write restart l h l l v v v act illegal (10) l lhhvvv pre/pall illegal (10) l lhlvvx ref/self illegal l l l h x x x mrs illegal llll op code
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 15 rev. a 03/13/00 operation command table (1,2) current state command operation cs ras cas we a9 a8 a7-a0 write recovery desl no operation, idle state after t dal has elapsed h xxxxxx with auto- nop no operation, idle state after t dal has elapsed l h h h x x x precharge bst no operation, idle state after t dal has elapsed l h h l x x x read/reada illegal (10) lhlhvvv writ/writa illegal (10) lhl lvvv act illegal (10) l lhhvvv pre/pall illegal (10) l lhlvvx ref/self illegal l l l h x x x mrs illegal llll op code refresh desl no operation, idle state after t rp has elapsed h xxxxxx nop no operation, idle state after t rp has elapsed l h h h x x x bst no operation, idle state after t rp has elapsed l h h l x x x read/reada illegal l h l h v v v writ/writa illegal l h l l v v v act illegal l l h h v v v pre/pall illegal l l h l v v x ref/self illegal l l l h x x x mrs illegal llll op code mode register desl no operation, idle state after t mcd has elapsed h xxxxxx set nop no operation, idle state after t mcd has elapsed l h h h x x x bst no operation, idle state after t mcd has elapsed l h h l x x x read/reada illegal l h l h v v v writ/writa illegal l h l l v v v act illegal l l h h v v v pre/pall illegal l l h l v v x ref/self illegal l l l h x x x mrs illegal llll op code notes: 1. h: high level input, l: low level input, x: high or low level input, v: valid data input 2. all input signals are latched on the rising edge of the clk signal. 3. both banks must be placed in the inactive (idle) state in advance. 4. the state of the a0 to a9 pins is loaded into the mode register as an op code. 5. the row address is generated automatically internally at this time. the i/o pin and the address pin data is ignored. 6. during a self-refresh operation, all pin data (states) other than cke is ignored. 7. the selected bank must be placed in the inactive (idle) state in advance. 8. the selected bank must be placed in the active state in advance. 9. this command is valid only when the burst length set to full page. 10. this is possible depending on the state of the bank selected by the a9 pin. 11. time to switch internal busses is required. 12. the IS42S16128 can be switched to power-down mode by dropping the cke pin low when both banks in the idle state. input pins other than cke are ignored at this time. 13. the IS42S16128 can be switched to self-refresh mode by dropping the cke pin low when both banks in the idle state. input pins other than cke are ignored at this time. 14. possible if t rrd is satisfied. 15. illegal if t ras is not satisfied. 16. the conditions for burst interruption must be observed. also note that the IS42S16128 will enter the precharged state immediately after the burst operation completes if auto-precharge is selected. 17. command input becomes possible after the period t rcd has elapsed. also note that the IS42S16128 will enter the precharged state immediately after the burst operation completes if auto-precharge is selected.
16 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? cke related command truth table (1) cke current state operation n-1 n cs ras cas we a9 a8 a7-a0 self-refresh undefined h xxxxxxxx self-refresh recovery (2) lhhxxxxxx self-refresh recovery (2) lhlhhxxxx illegal (2) lhlhlxxxx illegal (2) lhl lxxxxx self-refresh l l xxxxxxx self-refresh recovery idle state after t rc has elapsed h h h xxxxxx idle state after t rc has elapsed h h l h h xxxx illegal h h l h l xxxx illegal h h l l xxxxx power-down on the next cycle h l h xxxxxx power-down on the next cycle h l l h h xxxx illegal h l l h l xxxx illegal h l l l xxxxx clock suspend termination on the next cycle (2) lhxxxxxxx clock suspend l l xxxxxxx power-down undefined h xxxxxxxx power-down mode termination, idle after l h xxxxxxx that termination (2) power-down mode l l xxxxxxx both banks idle no operation h h h xxxxxx see the operation command table h h l h xxxxx bank active or precharge h h l l h xxxx auto-refresh h h l l l h x x x mode register set h h llll op code see the operation command table h l h xxxxxx see the operation command table h l l h xxxxx see the operation command table h l l l h xxxx self-refresh (3) hllllhxxx see the operation command table h lllll op code power-down mode (3) lxxxxxxxx other states see the operation command table h h xxxxxxx clock suspend on the next cycle (4) hlxxxxxxx clock suspend termination on the next cycle l h xxxxxxx clock suspend termination on the next cycle l l xxxxxxx notes: 1. h: high level input, l: low level input, x: high or low level input 2. the clk pin and the other input are reactivated asynchronously by the transition of the cke level from low to high. the minimum setup time (t cka ) required before all commands other than mode termination must be satisfied. 3. both banks must be set to the inactive (idle) state in advance to switch to power-down mode or self-refresh mode. 4. the input must be command defined in the operation command table.
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 17 rev. a 03/13/00 two banks operation command truth table (1,2) previous state next state operation cs ras cas we a9 a8 a7-a0 bank 0 bank 1 bank 0 bank 1 desl h xxxxxx any any any any nop l h h h x x x any any any any bst l h h l x x x r/w/a i/a a i/a i i/a i i/a i/a r/w/a i/a a i/a i i/a i read/reada l h l h h h ca i/a r/w/a i/a rp h h ca r/w a a rp h l ca i/a r/w/a i/a r h l ca r/w a a r l h ca r/w/a i/a rp i/a l h ca a r/w rp a l l ca r/w/a i/a r i/a l l ca a r/w r a writ/writa l h l l h h ca i/a r/w/a i/a wp h h ca r/w a a wp h l ca i/a r/w/a i/a w h l ca r/w a a w l h ca r/w/a i/a wp i/a l h ca a r/w wp a l l ca r/w/a i/a w i/a l l ca a r/w w a act l l h h h ra ra any i any a l ra ra i any a any pre/pall l l h l x h x r/w/a/i i/a i i x h x i/a r/w/a/i i i h l x i/a r/w/a/i i/a i h l x r/w/a/i i/a r/w/a/i i l l x r/w/a/i i/a i i/a l l x i/a r/w/a/i i r/w/a/i ref lllhxxx ii ii mrs llll opcode i i i i notes: 1. h: high level input, l: low level input, x: high or low level input, ra: row address, ca: column address 2. the device state symbols are interpreted as follows: i idle (inactive state) a row active state r read w write rp read with auto-precharge wp write with auto-precharge any any state
18 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? simplified state transition diagram (one bank operation) self refresh auto refresh idle power down active power down idle mode register set read bank active write clock suspend read with auto precharge pre- charge power on write with auto precharge clock suspend transition due to command input. automatic transition following the completion of command execution. mrs sref entry sref exit ref cke_ cke act cke_ cke bst bst read cke_ cke reada cke_ cke read reada read writa writ writ cke_ cke writa cke_ cke writ writa pre pre reada pre pre power applied
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 19 rev. a 03/13/00 device initialization at power-on (power-on sequence) as is the case with conventional drams, the IS42S16128 product must be initialized by executing a stipulated power-on sequence after power is applied. after power is applied and v cc and v cc q reach their stipulated voltages, set and hold the cke and dqm pins high for 100 s. then, execute the precharge command to precharge both bank. next, execute the auto-refresh command twice or more and define the device operation mode by executing a mode register set command. the mode register set command can be also set before auto-refresh command. mode register settings the mode register set command sets the mode register. when this command is executed, pins a0 to a7, a8, and a9 function as data input pins for setting the register, and this data becomes the device internal op code. this op code has four fields as listed in the table below. note that the mode register set command can be ex- ecuted only when both banks are in the idle (inactive) state. wait at least two cycles after executing a mode register set command before executing the next com- mand. cas latency during a read operation, the between the execution of the read command and data output is stipulated as the cas latency. this period can be set using the mode register set command. the optimal cas latency is determined by the clock frequency and device speed grade. see the "operating frequency / latency relationships" item for details on the relationship between the clock frequency and the cas latency. see the table on the next page for details on setting the mode register. input pin field a9, a8, a7 write mode a6, a5, a4 cas latency a3 burst type a2, a1, a0 burst length burst length when writing or reading, data can be input or output data continuously. in these operations, an address is input only once and that address is taken as the starting address internally by the device. the device then automatically generates the following address. the burst length field in the mode register stipulates the number of data items input or output in sequence. in the IS42S16128 product, a burst length of 1, 2, 4, 8, or full page can be specified. see the table on the next page for details on setting the mode register. burst type the burst data order during a read or write operation is stipulated by the burst type, which can be set by the mode register set command. the IS42S16128 product supports sequential mode and interleaved mode burst type set- tings. see the table on the next page for details on setting the mode register. see the "burst length and column address sequence" item for details on i/o data orders in these modes. write mode burst write or single write mode is selected by the op code (a9, a8, a7) of the mode register. a burst write operation is enabled by setting the op code (a9, a8, a7) to (0,0,0). a burst write starts on the same cycle as a write command set. the write start address is specified by the column address and bank select address at the write command set cycle. a single write operation is enabled by setting op code (a9, a8, a7) to (1,0,0). in a single write operation, data is only written to the column address and bank select address specified by the write command set cycle without regard to the bust length setting.
20 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? mode register 9876543210 write mode lt mode bt bl m2 m1 m0 sequential interleaved burst length 0 0 0 1 1 001 2 2 010 4 4 011 8 8 1 0 0 reserved reserved 1 0 1 reserved reserved 1 1 0 reserved reserved 1 1 1 full page reserved m3 type burst type 0 sequential 1 interleaved m6 m5 m4 cas latency latency mode 0 0 0 reserved 001 1 010 2 011 3 1 0 0 reserved 1 0 1 reserved 1 1 0 reserved 1 1 1 reserved address bus mode register (mx) m9 m8 m7 write mode 0 0 0 burst read & burst write 1 0 0 burst read & single write
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 21 rev. a 03/13/00 burst length and column address sequence column address address sequence burst length a2 a1 a0 sequential interleaved 2 x x 0 0-1 0-1 x x 1 1-0 1-0 4 x 0 0 0-1-2-3 0-1-2-3 x 0 1 1-2-3-0 1-0-3-2 x 1 0 2-3-0-1 2-3-0-1 x 1 1 3-0-1-2 3-2-1-0 8 0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7 0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6 0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5 0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4 1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3 1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2 1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1 1 1 1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0 full page n n n cn, cn+1, cn+2 none (256) cn+3, cn+4..... ...cn-1(cn+255), cn(cn+256)..... notes: 1. the burst length in full page mode is 256. bank select and precharge address allocation row x0 ? row address x1 ? row address x2 ? row address x3 ? row address x4 ? row address x5 ? row address x6 ? row address x7 ? row address x8 0 precharge of the selected bank (precharge command) row address 1 precharge of both banks (precharge command) (active command) x9 0 bank 0 selected (precharge and active command) 1 bank 1 selected (precharge and active command) column y0 ? column address y1 ? column address y2 ? column address y3 ? column address y4 ? column address y5 ? column address y6 ? column address y7 ? column address y8 0 auto-precharge not performed 1 auto-precharge performed y9 0 bank 0 selected (read and write commands) 1 bank 1 selected (read and write commands)
22 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? burst read the read cycle is started by executing the read command. the address provided during read command execution is used as the starting address. first, the data correspond- ing to this address is output in synchronization with the clock signal after the cas latency period. next, data corresponding to an address generated automatically by the device is output in synchronization with the clock signal. the output buffers go to the low impedance state cas latency minus one cycle after the read command, and go to the high impedance state automatically after the last data is output. however, the case where the burst length is a full page is an exception. in this case the output buffers must be set to the high impedance state by executing a burst stop command. note that upper byte and lower byte output data can be masked independently under control of the signals ap- plied to the u/ldqm pins. the delay period (t qmd ) is fixed at two, regardless of the cas latency setting, when this function is used. the selected bank must be set to the active state before executing this command. burst length cas latency t cac read command i/o clk d out 0d out 1d out 2d out 3 cas latency = 3, burst length = 4 burst write the write cycle is started by executing the command. the address provided during write command execution is used as the starting address, and at the same time, data for this address is input in synchronization with the clock signal. next, data is input in other in synchronization with the clock signal. during this operation, data is written to address generated automatically by the device. this cycle terminates automatically after a number of clock cycles determined by the stipulated burst length. how- ever, the case where the burst length is a full page is an exception. in this case the write cycle must be terminated by executing a burst stop command. the latency for i/o pin data input is zero, regardless of the cas latency setting. however, a wait period (write recov- ery: t dpl ) after the last data input is required for the device to complete the write operation. note that the upper byte and lower byte input data can be masked independently under control of the signals ap- plied to the u/ldqm pins. the delay period (t dmd ) is fixed at zero, regardless of the cas latency setting, when this function is used. the selected bank must be set to the active state before executing this command. burst length write command i/o clk d in 0d in 1d in 2d in 3 cas latency = 2,3, burst length = 4
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 23 rev. a 03/13/00 read with auto-precharge the read with auto-precharge command first executes a burst read operation and then puts the selected bank in the precharged state automatically. after the precharge completes, the bank goes to the idle state. thus this command performs a read command and a precharge command in a single operation. during this operation, the delay period (t pql ) between the last burst data output and the start of the precharge operation differs depending on the cas latency setting. when the cas latency setting is one, the precharge operation starts a the same time as the last burst data is output (t pql = 0). when the cas latency setting is two, the precharge operation starts on one clock cycle before the last burst data is output (t pql = ? 1). when the cas latency setting is three, the precharge operation starts on two clock cycles before the last burst data is output (t pql = ? 2). therefore, the selected bank can be made active after a delay of t rp from the start position of this precharge operation. the selected bank must be set to the active state before executing this command. the auto-precharge function is invalid if the burst length is set to full page. command i/o clk command i/o clk reada 0 act 0 t rp t rp precharge start read with auto-precharge (bank 0) t pql t pql reada 0 act 0 precharge start read with auto-precharge (bank 0) d out 0d out 1d out 2d out 3 d out 0d out 1d out 2d out 3 cas latency = 2, burst length = 4 cas latency = 3, burst length = 4 cas latency 3 2 t pql ? 2 ? 1
24 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? write with auto-precharge the write with auto-precharge command first executes a burst write operation and then puts the selected bank in the precharged state automatically. after the precharge completes the bank goes to the idle state. thus this command performs a write command and a precharge command in a single operation. during this operation, the delay period (t dal ) between the last burst data input and the completion of the precharge operation differs depending on the cas latency setting. the delay (t dal ) is t rp plus one clk period. that is, the precharge operation starts one clock period after the last burst data input. therefore, the selected bank can be made active after a delay of t dal . the selected bank must be set to the active state before executing this command. the auto-precharge function is invalid if the burst length is set to full page. cas latency 3 2 t dal 1clk 1clk +t rp +t rp t rp t rp t dal t dal precharge start precharge start write a0 command i/o i/o clk d in 0d in 1d in 2d in 3 act 0 write with auto-precharge (bank 0) write a0 command clk act 0 write with auto-precharge (bank 0) d in 0d in 1d in 2d in 3 cas latency = 2, burst length = 4 cas latency = 3, burst length = 4
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 25 rev. a 03/13/00 interval between read command a new command can be executed while a read cycle is in progress, i.e., before that cycle completes. when the second read command is executed, after the cas latency has elapsed, data corresponding to the new read com- mand is output in place of the data due to the previous read command. the interval between two read command (t ccd ) must be at least one clock cycle. the selected bank must be set to the active state before executing this command. cas latency = 2, burst length = 4 read a0 read b0 command i/o clk d out a0 d out b0 d out b1 d out b2 read (ca=a, bank 0) read (ca=b, bank 0) t ccd d out b3 interval between write command a new command can be executed while a write cycle is in progress, i.e., before that cycle completes. at the point the second write command is executed, data corresponding to the new write command can be input in place of the data for the previous write command. the interval between two write commands (t ccd ) must be at least one clock cycle. the selected bank must be set to the active state before executing this command. cas latency = 2, burst length = 4 write a0 write b0 command i/o clk d in a0 d in b0 d in b1 d in b2 d in b3 write (ca=a, bank 0) write (ca=b, bank 0) t ccd
26 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? a new read command can be executed while a write cycle is in progress, i.e., before that cycle completes. data corresponding to the new read command is output after the cas latency has elapsed from the point the new read command was executed. the i/on pins must be placed in the high impedance state at least one cycle before data is output during this operation. the interval (t ccd ) between command must be at least one clock cycle. the selected bank must be set to the active state before executing this command. interval between write and read commands i/o i/o write a0 read b0 command clk d in a0 d out b0 d out b2 d out b1 d out b3 t ccd hi-z write (ca=a, bank 0) read (ca=b, bank 0) write a0 read b0 command clk d in a0 d out b0 d out b2 d out b1 d out b3 t ccd hi-z write (ca=a, bank 0) read (ca=b, bank 0) cas latency = 2, burst length = 4 cas latency = 3, burst length = 4 don ? t care
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 27 rev. a 03/13/00 a read command can be interrupted and a new write command executed while the read cycle is in progress, i.e., before that cycle completes. data corresponding to the new write command can be input at the point new write command is executed. to prevent collision between input and output data at the i/on pins during this opera- tion, the output data must be masked using the u/ldqm pins. the interval (t ccd ) between these commands must be at least one clock cycle. the selected bank must be set to the active state before executing this command. interval between read and write commands cas latency = 2, 3, burst length = 4 write b0 read a0 command u/ldqm i/o clk d in b0 d in b2 d in b1 d in b3 t ccd hi-z read (ca=a, bank 0) write (ca=b, bank 0)
28 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? precharge the precharge command sets the bank selected by pin a9 to the precharged state. this command can be executed at a time t ras following the execution of an active com- mand to the same bank. the selected bank goes to the idle state at a time t rp following the execution of the precharge command, and an active command can be executed again for that bank. if pin a8 is low when this command is executed, the bank selected by pin a9 will be precharged, and if pin a8 is high, both banks will be precharged at the same time. this input to pin a9 is ignored in the latter case. read cycle interruption using the precharge command a read cycle can be interrupted by the execution of the precharge command before that cycle completes. the delay time (t rql ) from the execution of the precharge command to the completion of the burst output is the clock cycle of cas latency. t rql t rql pre 0 read a0 command i/o clk d out a0 d out a1 d out a2 hi-z read (ca=a, bank 0) precharge (bank 0) pre 0 read a0 command i/o clk d out a0 d out a1 d out a2 hi-z read (ca=a, bank 0) precharge (bank 0) cas latency 3 2 t rql 32 cas latency = 2, burst length = 4 cas latency = 3, burst length = 4
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 29 rev. a 03/13/00 cas latency = 2, 3, burst length = 4 write cycle interruption using the precharge command a write cycle can be interrupted by the execution of the precharge command before that cycle completes. the delay time (t wdl ) from the precharge command to the point where burst input is invalid, i.e., the point where input data is no longer written to device internal memory is zero clock cycles regardless of the cas . to inhibit invalid write, the dqm signal must be asserted high with the precharge command. this precharge command and burst write command must be of the same bank, otherwise it is not precharge interrupt but only another bank precharge of dual bank operation. inversely, to write all the burst data to the device, the precharge command must be executed after the write data recovery period (t dpl ) has elapsed. therefore, the precharge command must be executed on one clock cycle that follows the input of the last burst data item. pre 0 write a0 command dqm i/o clk d in a0 d in a1 d in a2 d in a3 t wdl =0 write (ca=a, bank 0) precharge (bank 0) masked by dqm pre 0 write a0 command i/o clk d in a0 d in a1 d in a2 d in a3 t dpl write (ca=a, bank 0) precharge (bank 0) cas latency 3 2 t wdl 00 t dpl 11 cas latency = 2, 3, burst length = 4
30 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? read cycle (full page) interruption using the burst stop command the IS42S16128 can output data continuously from the burst start address (a) to location a+255 during a read cycle in which the burst length is set to full page. the IS42S16128 repeats the operation starting at the 256th cycle with the data output returning to location (a) and continuing with a+1, a+2, a+3, etc. a burst stop command must be executed to terminate this cycle. a precharge command must be executed within the act to pre command period (t ras max.) following the burst stop command. after the period (t rbd ) required for burst data output to stop following the execution of the burst stop command has elapsed, the outputs go to the high impedance state. this period (t rbd ) is one clock cycle when the cas latency is one, two clock cycle when the cas latency is two and three clock cycle when the cas latency is three. cas latency 3 2 t rbd 32 command i/o clk t rbd bst read a0 command i/o clk t rbd read (ca=a, bank 0) burst stop read a0 read (ca=a, bank 0) burst stop bst hi-z hi-z d out a0 d out a0 d out a0 d out a0 d out a1 d out a1 d out a2 d out a2 d out a3 d out a3 cas latency = 2, burst length = full page cas latency = 3, burst length = full page
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 31 rev. a 03/13/00 write cycle (full page) interruption using the burst stop command the IS42S16128 can input data continuously from the burst start address (a) to location a+255 during a write cycle in which the burst length is set to full page. the IS42S16128 repeats the operation starting at the 256th cycle with data input returning to location (a) and continu- ing with a+1, a+2, a+3, etc. a burst stop command must be executed to terminate this cycle. a precharge com- mand must be executed within the act to pre command period (t ras max.) following the burst stop command. after the period (t wbd ) required for burst data input to stop following the execution of the burst stop command has elapsed, the write cycle terminates. this period (t wbd ) is zero clock cycles, regardless of the cas latency. cas latency = 2, 3, burst length = full page burst data interruption using the u/ldqm pins (read cycle) burst data output can be temporarily interrupted (masked) during a read cycle using the u/ldqm pins. regardless of the cas latency, two clock cycles (t qmd ) after one of the u/ldqm pins goes high, the corresponding outputs go to the high impedance state. subsequently, the outputs are maintained in the high impedance state as long as that u/ldqm pin remains high. when the u/ldqm pin goes low, output is resumed at a time t qmd later. this output control operates independently on a byte basis with the udqm pin controlling upper byte output (pins i/o8-i/o15) and the ldqm pin controlling lower byte output (pins i/o0 to i/o7). since the u/ldqm pins control the device output buffers only, the read cycle continues internally and, in particular, incrementing of the internal burst counter continues. cas latency = 2, burst length = 4 write a0 command i/o clk d in a0 d in a1 d in ad in a1 d in a2 t wbd=0 t rp read (ca=a, bank 0) burst stop bst pre 0 invalid data precharge (bank 0) read a0 command udqm ldqm i/o8-i/o15 i/o0-i/o 7 clk d out a0 t qmd=2 hi-z hi-z hi-z read (ca=a, bank 0) data mask (lower byte) data mask (upper byte) d out a2 d out a3 d out a1 d out a0 don ? t care
32 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? burst data interruption u/ldqm pins (write cycle) burst data input can be temporarily interrupted (muted ) during a write cycle using the u/ldqm pins. regardless of the cas latency, as soon as one of the u/ldqm pins goes high, the corresponding externally applied input data will no longer be written to the device internal circuits. subsequently, the corresponding input continues to be muted as long as that u/ldqm pin remains high. the IS42S16128 will revert to accepting input as soon as that pin is dropped to low and data will be written to the device. this input control operates independently on a byte basis with the udqm pin controlling upper byte input (pin i/o8 to i/o15) and the ldqm pin controlling the lower byte input (pins i/o0 to i/o7). since the u/ldqm pins control the device input buffers only, the cycle continues internally and, inparticular, incrementing of the internal burst counter continues. cas latency = 2, burst length = 4 burst read and single write the burst read and single write mode is set up using the mode register set command. during this operation, the burst read cycle operates normally, but the write cycle only writes a single data item for each write cycle. the cas latency and dqm latency are the same as in normal mode. write a0 command udqm ldqm i/o8-i/o15 i/o0-i/o7 clk d in a1 write (ca=a, bank 0) data mask (lower byte) data mask (upper byte) t dmd=0 d in a2 d in a3 d in a0 d in a3 write a0 command i/o clk d in a0 write (ca=a, bank 0) cas latency = 2, 3 don ? t care
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 33 rev. a 03/13/00 bank active command interval when the selected bank is precharged, the period trp has elapsed and the bank has entered the idle state, the bank can be activated by executing the active command. if the other bank is in the idle state at that time, the active command can be executed for that bank after the period t rrd has elapsed. at that point both banks will be in the active state. when a bank active command has been executed, a precharge command must be executed for that bank within the act to pre command period (t ras max.). also note that a precharge command cannot be executed for an active bank before t ras (min.) has elapsed. after a bank active command has been executed and the trcd period has elapsed, read write (including auto- precharge) commands can be executed for that bank. cas latency = 3 clock suspend when the cke pin is dropped from high to low during a read or write cycle, the IS42S16128 enters clock sus- pend mode on the next clk rising edge. this command reduces the device power dissipation by stopping the device internal clock. clock suspend mode continues as long as the cke pin remains low. in this state, all inputs other than cke pin are invalid and no other commands can be executed. also, the device internal states are maintained. when the cke pin goes from low to high, cas latency = 2, burst length = 4 act 0 act 1 command clk bank active (bank 0) bank active (bank 1) t rrd act 0 read 0 command clk bank active (bank 0) bank active (bank 0) t rcd clock suspend mode is terminated on the next clk rising edge and device operation resumes. the next command cannot be executed until the recovery period (tcka) has elapsed. since this command differs from the self-refresh command described previously in that the refresh operation is not performed automatically internally, the refresh operation must be performed within the refresh period (tref). thus the maximum time that clock suspend mode can be held is just under the refresh cycle time. read 0 command cke i/o clk d out 0d out 1d out 2d out 3 read (bank 0) clock suspend
34 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? operation timing example power-on sequence, mode register set cycle clk cke high high cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t10 t17 t18 t19 t20 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 0 & 1 t ah t as t ah t as t ah t as code code code row row bank 1 bank 0 wait time t=100 s t rp t rc t rc t mcd t ras t rc < act > < mrs > < ref > < pall >< ref > cas latency = 2, 3 undefined don't care
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 35 rev. a 03/13/00 power-down mode cycle cas latency = 2, 3 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 tn tn+1 tn+2 tn+3 t ck t cks t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as row row bank 1 bank 0 t cks t ckh t cka t cka t ah t as t rp power down mode exit power down mode t ras t rc < act > < sby > < pre > < pall > bank 0 & 1 bank 0 or 1 bank 1 bank 0 undefined don't care
36 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? auto-refresh cycle cas latency = 2, 3 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 tl tm tn tn+1 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 0 & 1 row row bank 1 bank 0 t rp t rc t rc t rc t ras t rc < act > < ref >< ref > < pall >< ref > t cks undefined don't care
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 37 rev. a 03/13/00 self-refresh cycle undefined don't care cas latency = 2, 3 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 tm tm+2 tm+1 tn t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 0 & 1 t cks t cks t cka t cka t rp self refresh mode exit self refresh t rc t rc < ref > < pall >< self > t cks
38 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? read cycle cas latency = 2, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 0 and 1 bank 0 or 1 no pre t ah t as t cs t ah t as t cks t cka bank 0 bank 0 bank 1 bank 1 bank 0 bank 1 bank 0 row row row column m row t qmd t lz t ras t rc < act >< read > < act > < pre > < pall > t rcd t cac t rql t rp t rcd t ac t ac t oh t ac t ac t oh t ch t oh d out md out m+1 d out m+2 t oh t hz d out m+3 t rc t ras undefined don't care
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 39 rev. a 03/13/00 read cycle / auto-precharge undefined don't care cas latency = 2, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 auto pre t ah t as t cs t ah t as t cks t cka bank 0 bank 0 bank 1 bank 1 bank 0 row row row column m row t qmd t lz t ras t rc < act >< reada > < act > t rcd t cac t pql t rp t rcd t ac t ac t oh t ac t ac t oh t ch t oh d out md out m+1 d out m+2 t oh t hz d out m+3 t rc t ras
40 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? read cycle / full page undefined don't care cas latency = 2, burst length = full page clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t260 t261 t262 t263 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as no pre t ah t as t cs t ah t as t cks t cka bank 0 bank 0 bank 0 or 1 bank 0 row column row t qmd t lz t ras t rc (bank 0) < act 0 >< read0 > < bst >< pre 0 > t rcd t cac (bank 0) t rbd t ac t ac t oh t ac t ac t ac t oh t ch t oh d out 0m d out 0m+1 d out 0m-1 t oh t hz t oh d out 0m d out 0m+1 t rp (bank 0)
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 41 rev. a 03/13/00 read cycle / ping-pong operation (bank switching) undefined don't care cas latency = 2, burst length = 2 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 0 bank 0 bank 0 bank 0 bank 1 bank 1 bank 1 bank 0 or 1 bank 0 or 1 no pre no pre t ch t ah t as t qmd t cs t ac t ac t ac t ac t rcd (bank 0) t ras (bank 0) < act 0 > < act 0 >< act1 > < read 0 > < reada 0 >< reada 1 > < read 1 >< pre 0 >< pre 1 > t ah t as t cks t cka row row row row row column column auto pre auto pre row t lz t lz t rcd (bank 1) t ras (bank 1) t rc (bank 1) t cac (bank 1) t cac (bank 1) t rc (bank 0) t rp (bank 0) t rp (bank1) t rcd (bank 0) t ras (bank 0) t rc (bank 0) t rrd (bank 0 to 1) t oh t oh t oh t oh t hz t hz d out 0m d out 0m+1 d out 1m d out 1m+1
42 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? write cycle undefined don't care cas latency = 2, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t7 t6 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 0 bank 0 or 1 bank 0 and 1 no pre t ch t ah t as t cs t ds t ds t ds t ds t dh t ras t rc < pre > < pall > < act > < act >< writ > t ah t as t cks t cka row row row column m row t rcd t dh t dh t dh t rp t dpl t rcd t ras t rc d in m d in m+2 d in m+1 d in m+3 bank 1 bank 0 bank 1 bank 0 bank 1 bank 0
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 43 rev. a 03/13/00 write cycle / auto-precharge undefined don't care cas latency = 2, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t7 t6 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 0 auto pre t ch t ah t as t cs t ds t ds t ds t ds t dh t ras t rc < act > < act >< writa > t ah t as t cks t cka row row row column m row t rcd t dh t dh t dh t rp t dal t rcd t ras t rc d in m d in m+2 d in m+1 d in m+3 bank 1 bank 0 bank 1 bank 0
44 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? write cycle / full page undefined don't care cas latency = 2, burst length = full page clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t259 t258 t260 t261 t262 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as no pre t ah t as t cs t ah t as t cks t cka bank 0 bank 0 bank 0 or 1 bank 0 row column m row t ras t rc < act 0 >< writ0 > < bst >< pre 0 > t rcd t ch t dpl t rp t ds t ds t ds t ds t dh t dh t dh t dh d in 0m d in 0m+2 d in 0m+1 d in 0m-1 d in 0m
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 45 rev. a 03/13/00 write cycle / ping-pong operation undefined don't care cas latency = 2, burst length = 2 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 0 bank 0 bank 0 bank 0 bank 1 bank 1 bank 0 or 1 no pre no pre t ch t ah t as t cs t ds t ds t rcd (bank 0) t ras (bank 0) < act 0 >< act 1 > < writ 0 > < writa 0 >< writa 1 > < writ 1 >< pre 0 >< act 0 > t ah t as t cks t cka row row row row row column column auto pre auto pre row t rcd (bank 1) t ras (bank 1) t rc (bank 1) t rc (bank 0) t rcd (bank 0) t rp (bank 0) t ras (bank 0) t rc (bank 0) t rrd (bank 0 to 1) t dpl t dpl t dh t dh t ds t dh t dh d in 0m t ds t ds t dh t ds t dh t dh t dh t ds t ds d in 0m+1 d in 0m+2 d in 0m+3 d in 1m d in 1m+1 d in 1m+2 d in 1m+3
46 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? read cycle / page mode undefined don't care cas latency = 2, burst length = 2 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 0 bank 0 bank 0 bank 0 bank 1 bank 0 or 1 bank 0 and 1 bank 1 t ch t ah t as t lz t cs t ras t rc < act >< read > < reada > < read > < read > < pall > < pre > t ah t as t cks t cka row column m column n column o no pre no pre no pre auto pre row t rcd t cac t cac t cac t rql t hz t rp t qmd bank 1 bank 0 bank 1 t ac t ac t oh t ac t ac t ac t ac t oh t oh t oh t oh t oh d out md out m+1 d out nd out n+1 d out od out o+1
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 47 rev. a 03/13/00 read cycle / page mode; data masking undefined don't care clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 0 bank 0 bank 0 bank 0 bank 1 bank 0 or 1 bank 0 and 1 no pre bank 1 t qmd t ah t as t lz t cs t ras t rc < act >< read > < reada, enb > < read, enb > < mask > < pall > < pre > t ah t as t cks t cka row column m column n column o no pre no pre no pre auto pre row t ch t rcd t cac t cac t cac t rql t hz t hz t rp t qmd bank 1 bank 0 bank 1 t ac t lz t ac t oh t ac t ac t ac t oh t oh t oh t oh d out md out m+1 d out nd out od out o+1 cas latency = 2, burst length = 2
48 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? write cycle / page mode undefined don't care cas latency = 2, burst length = 2 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 0 bank 0 bank 0 bank 0 bank 1 bank 0 or 1 bank 0 and 1 bank 1 t ch t ah t as t cs t ras t rc < act >< writ > < writa > < writ > < writ > < pall > < pre > t ah t as t cks t cka row column m column n column o no pre no pre no pre auto pre row t rcd t dpl t rp bank 1 bank 0 bank 1 t ds t ds t ds t ds t dh t ds t dh t dh t dh t ds t dh t dh d in m d in n d in m+1 d in n+1 d in o d in o+1
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 49 rev. a 03/13/00 write cycle / page mode; data masking undefined don't care cas latency = 2, burst length = 2 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 0 bank 0 bank 0 bank 0 bank 1 bank 1or 0 bank 0 and 1 bank 1 t ch t ah t as t cs t ras t rc < act >< writ >< writ > < writa > < writ > < mask > < pall > < pre > t ah t as t cks t cka row column m column n column o no pre no pre no pre auto pre row t rcd t dpl t rp bank 1 bank 0 bank 1 t ds t ds t ds t dh t ds t dh t dh t dh t ds t dh d in m d in n d in m+1 d in o d in o+1
50 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? read cycle / clock suspend undefined don't care cas latency = 2, burst length = 2 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as no pre auto pre t ah t as t cs t ckh t ah t as t cks t cka t cks bank 1 bank 0 bank 1 bank 1 bank 0 bank 0 bank 1 bank 0 bank 0 and 1 bank 0 or 1 row row row column m row t qmd t lz t ras t rc t rc < act 0 > < act > < read > < read a > < spnd >< spnd >< pre > < pall > t rcd t cac t ac t ac t oh t oh t ch d out md out m+1 t hz t rp t ras
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 51 rev. a 03/13/00 write cycle / clock suspend undefined don't care cas latency = 2, burst length = 2 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as no pre auto pre t ah t as t cs t ckh t ah t as t cks t cka t cks bank 1 bank 0 bank 1 bank 1 bank 0 bank 0 bank 1 bank 0 bank 0 and 1 bank 0 or 1 row row row column m row t ds t ras t rc t rc < act > < act > < writ, spnd > < writa, spnd > < spnd >< pre > < pall > t rcd t ch t dh t dh t ds t dpl t rp t ras d in md in m+1
52 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? read cycle / precharge termination undefined don't care cas latency = 2, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as no pre auto pre no pre t ah t as t cs t ah t as t cks t cka bank 0 bank 0 bank 1 bank 0 bank 0 bank 0 bank 0 or 1 row row row column m column n row t qmd t lz t ras t rc t rc < act 0 > < act > < read 0 > < pre 0 >< read > < reada > t rcd t cac t rql t rp t rcd t ac t ac t oh t ac t hz t oh t oh t ch d out md out m+2 t ras t cac bank 1 d out m+1
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 53 rev. a 03/13/00 write cycle / precharge termination undefined don't care cas latency = 2, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as no pre auto pre no pre t ah t as t ah t as t cks t cka bank 0 bank 0 bank 1 bank 0 bank 0 bank 0 bank 0 or 1 row row row column m column n row t ras t rc t rc < act 0 > < act > < writ 0 > < pre 0 >< writ > < writa > t rcd t rp t rcd t ras bank 1 d in 0m d in 0n d in 0m+1 d in 0m+2 t ds t ds t ds t ds t dh t dh t dh t dh t cs t ch t cs t cs t ch
54 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? read cycle / byte operation undefined don't care cas latency = 2, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 ldqm udqm i/o8-15 i/o0-7 t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 1 bank 0 and 1 bank 0 or 1 no pre auto pre t ch t ah t as t cs t cs t ch t ah t as t cks t cka bank 0 bank 0 bank 1 bank 1 bank 0 bank 0 row column m row t qmd t qmd t ras t rc < act > < act > < read > < reada > < masku > < maskl > < enbu, maskl > < pall > < pre > t rcd t cac t qmd t rql t rcd t ras t rc t rp t ac t hz t oh t ac t ac t lz t lz t lz d out m d out m d out m+2 d out m+1 d out m+3 t oh t oh t oh t ac t ac t oh row row
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 55 rev. a 03/13/00 write cycle / byte operation undefined don't care cas latency = 2, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 ldqm udqm i/o8-15 i/o0-7 t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 1 bank 0 and 1 bank 0 or 1 no pre auto pre t ch t ah t as t cs t cs t ch t ah t as t cks t cka bank 0 bank 0 bank 1 bank 1 bank 0 bank 0 row column m row t ras t rc < act > < act > < writ > < writa > < mask > < maskl > < enb > < pall > < pre > t rcd t dpl t rcd t ras t rc t rp row row t dh t ds t ds t dh t ds t dh t ds d in m d in m d in m+3 t dh t dh t ds d in m+1 d in m+3
56 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? read cycle, write cycle / burst read, single write undefined don't care cas latency = 2, burst length = 4 column n clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 0 and 1 bank 0 or 1 no pre no pre auto pre t ch t ah t as t cs t ah t as t cks t cka bank 0 bank 0 bank 1 bank 1 bank 0 bank 1 bank 0 row column m row t qmd t hz t lz t ras t rc < act >< read > < writa > < writ > < pall > < pre > t rcd t cac t dpl t rp t ac t ac t oh t ac t ac t oh t dh t ds t oh d out md out m+1 d out m+2 t oh d out m+3 d in n
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 57 rev. a 03/13/00 read cycle undefined don't care cas latency = 3, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 t12 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 0 and 1 bank 0 or 1 no pre t ah t as t cs t ah t as t cks t cka bank 0 bank 0 bank 1 bank 1 bank 0 bank 1 bank 0 row row row column m row t qmd t lz t ras t rc < act >< read > < act > < pre > < pall > t rcd t cac t rql t rp t rcd t ac t ac t oh t ac t ac t oh t ch t oh d out md out m+1 d out m+2 t oh t hz d out m+3 t rc t ras
58 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? read cycle / auto-precharge undefined don't care cas latency = 3, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 t12 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 auto pre t ah t as t cs t ah t as t cks t cka bank 0 bank 0 bank 1 bank 1 bank 0 row row row column row t qmd t lz t ras t rc < act >< reada > < act > t rcd t cac t pql t rp t rcd t ac t ac t oh t ac t ac t oh t ch t oh d out md out m+1 d out m+2 t oh t hz d out m+3 t rc t ras
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 59 rev. a 03/13/00 read cycle / full page undefined don't care cas latency = 3, burst length = full page clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t262 t263 t264 t265 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as no pre t ah t as t cs t ah t as t cks t cka bank 0 bank 0 bank 0 or 1 bank 0 row column row t lz t ras (bank 0) t rc (bank 0) < act 0 >< read0 > < bst >< pre 0 > t rcd (bank 0) t cac (bank 0) t rbd t ac t ac t oh t ac t ac t ac t oh t ch t oh d out 0m d out 0m+1 d out 0m-1 t oh t hz t oh d out 0m d out 0m+1 t rp (bank 0)
60 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? undefined don't care cas latency = 3, burst length = 2 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 t12 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 0 bank 1 bank 0 bank1 bank 0 bank 1 bank 0 bank 0 or 1 bank 0 or 1 no pre no pre t ch t ah t as t qmd t cs t ac t ac t ac t ac t rcd (bank 0) t ras (bank 0) < act 0 > < act 0 > < act1 >< read 0 > < reada 0 >< reada 1 > < read 1 >< pre 0 >< pre 1 > t ah t as t cks t cka row row row row row column column auto pre auto pre row t lz t ras (bank 1) t rc (bank 1) t rcd (bank 1) t cac (bank 1) t cac (bank 0) t rc (bank 0) t rql (bank 0) t rp (bank 0) t rcd (bank 0) t ras (bank 0) t rp (bank1) t rc (bank 0) t rrd (bank 0 to 1) t oh t oh t oh t oh t hz d out 0m d out 0m+1 d out 1m d out 1m+1 read cycle / ping pong operation (bank switching)
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 61 rev. a 03/13/00 write cycle undefined don't care cas latency = 3, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t7 t6 t8 t9 t10 t11 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 0 bank 0 or 1 bank 0 and 1 no pre t ch t ah t as t cs t ds t ds t ds t ds t dh t ras t rc < pre > < pall > < act > < act >< writ > t ah t as t cks t cka row row row column row t rcd t dh t dh t dh t rp t dpl t rcd t ras t rc d in m d in m+2 d in m+1 d in m+3 bank 1 bank 0 bank 1 bank 0 bank 1 bank 0 t12
62 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? write cycle / auto-precharge undefined don't care cas latency = 3, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t7 t6 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 0 auto pre t ch t ah t as t cs t ds t ds t ds t ds t dh t ras t rc < act > < act >< writa > t ah t as t cks t cka row row row column row t rcd t dh t dh t dh t rp t dal t rcd t ras t rc d in m d in m+2 d in m+1 d in m+3 bank 1 bank 0 bank 1 bank 0 t11 t12
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 63 rev. a 03/13/00 write cycle / full page undefined don't care cas latency = 3, burst length = full page clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t259 t6 t260 t261 t262 t263 t264 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as no pre t ah t as t cs t ah t as t cks t cka bank 0 bank 0 bank 0 or 1 bank 0 row column row t ras t rc < act 0 >< writ0 > < bst >< pre 0 > t rcd t ch t dpl t rp t ds t ds t ds t ds t dh t dh t dh t dh d in 0m d in 0m+2 d in 0m+1 d in 0m-1 d in 0m
64 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? write cycle / ping-pong operation (bank switching) undefined don't care cas latency = 3, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 0 bank 0 bank 0 bank 1 bank 1 bank 0 or 1 no pre no pre t ch t ah t as t cs t ds t ds t rcd (bank 0) t ras (bank 0) < act 0 >< act 1 > < writ 0 > < writa 0 >< writa 1 > < writ 1 >< pre 0 >< act 0 > t ah t as t cks t cka row row row row row column column auto pre auto pre row t rcd (bank 1) t ras (bank 1) t rc (bank 1) t rc (bank 0) t rcd t rp (bank 0) t ras t rc t rrd (bank 0 to 1) t dpl (bank 0) t dpl t dh t dh t ds t dh t dh d in 0m t ds t ds t dh t ds t dh t dh t dh t ds t ds d in 0m+1 d in 0m+2 d in 0m+3 d in 1m d in 1m+1 d in 1m+2 d in 1m+3 t11 t12 bank 0 bank 1
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 65 rev. a 03/13/00 read cycle / page mode undefined don't care cas latency = 3, burst length = 2 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 0 bank 0 bank 0 bank 0 bank 1 bank 0 or 1 bank 0 and 1 bank 1 t ch t ah t as t lz t cs t ras t rc < act >< read > < reada > < read > < read > < pall > < pre > t ah t as t cks t cka row column m column n column o no pre no pre no pre auto pre row t rcd t cac t cac t cac t rql t hz t rp t qmd bank 1 bank 0 bank 1 t ac t ac t oh t ac t ac t ac t ac t oh t oh t oh t oh t oh d out md out m+1 d out nd out n+1 d out od out o+1 t11 t12
66 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? read cycle / page mode; data masking undefined don't care cas latency = 3, burst length = 2 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 0 bank 0 bank 0 bank 0 bank 1 bank 0 or 1 bank 0 and 1 bank 1 t qmd t ah t as t lz t cs t ras t rc < act >< read >< read >< enb > < reada, mask > < read, mask > < pall > < pre > t ah t as t cks t cka row column m column n column o no pre no pre no pre auto pre row t ch t rcd t cac t cac t cac t rql t hz t rp t qmd bank 1 bank 0 bank 1 t ac t ac t oh t ac t ac t ac t oh t oh t oh t oh d out md out m+1 d out nd out od out o+1 t11 t12
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 67 rev. a 03/13/00 write cycle / page mode undefined don't care cas latency = 3, burst length = 2 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 0 bank 0 bank 0 bank 0 bank 1 bank 0 or 1 bank 0 and 1 bank 1 t ch t ah t as t cs t ras t rc < act >< writ > < writa > < writ > < writ >< mask > < pall > < pre > t ah t as t cks t cka row column m column n column o no pre no pre no pre auto pre row t rcd t dpl t rp bank 1 bank 0 bank 1 t ds t ds t ds t dh t ds t dh t dh t dh t ds t dh d in m d in n d in m+1 d in o d in o+1 t11 t12
68 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? write cycle / page mode; data masking undefined don't care cas latency = 3, burst length = 2 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 t12 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 0 bank 0 bank 0 bank 0 bank 1 bank 1or 0 bank 0 and 1 bank 1 t ch t ah t as t cs t ras t rc < act >< writ >< writ > < writa > < writ > < mask > < pall > < pre > t ah t as t cks t cka row column m column n column o no pre no pre no pre auto pre row t rcd t dpl t rp bank 1 bank 0 bank 1 t ds t ds t ds t dh t ds t dh t dh t dh t ds t dh d in m d in n d in m+1 d in o d in o+1
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 69 rev. a 03/13/00 read cycle / clock suspend undefined don't care cas latency = 3, burst length = 2 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as no pre auto pre t ah t as t cs t ckh t ah t as t cks t cka t cks bank 1 bank 0 bank 0 bank 1 bank 0 bank 0 and 1 bank 0 or 1 row column m row t qmd t lz t ras t rc < act >< read > < read a > < spnd >< spnd >< pre > < pall > t rcd t cac t ac t ac t oh t oh t ch d out md out m+1 t hz t rp t12 bank 1
70 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? write cycle / clock suspend undefined don't care cas latency = 3, burst length = 2 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as no pre auto pre t ah t as t cs t ckh t ah t as t cks t cka t cks bank 1 bank 0 bank 1 bank 1 bank 0 bank 0 bank 1 bank 0 bank 0 and 1 bank 0 or 1 row row row column m row t ds t ras t rc t rc < act > < act > < writ, spnd > < writa, spnd > < spnd >< pre > < pall > t rcd t ch t dh t dh t ds t dpl t rp t ras d in md in m+1 t11 t12
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 71 rev. a 03/13/00 read cycle / precharge termination undefined don't care cas latency = 3, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as no pre t ah t as t cs t ah t as t cks t cka bank 0 bank 0 bank 0 row row row column m row t qmd t lz t ras t rc t rp < act 0 > < act > < read 0 > < pre 0 > t rcd t cac t rql t rp t rcd t ac t ac t oh t ac t hz t oh t oh t ch d out md out m+2 t ras bank 1 d out m+1 t11 t12 bank 0 bank 0 or 1
72 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? write cycle / precharge termination undefined don't care cas latency = 3, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as no pre t ah t as t ah t as t cks t cka bank 0 bank 0 bank 0 row row row column m row t rc t rp < act 0 > < act > < writ 0 > < pre 0 > t rcd t rp t rcd t ras bank 1 d in 0m d in 0m+1 d in 0m+2 t ds t ds t ds t dh t dh t dh t11 t12 t ch t ch t cs t cs bank 0 bank 0 or 1 t ras
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 73 rev. a 03/13/00 read cycle / byte operation undefined don't care cas latency = 3, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 ldqm udqm i/o8-15 i/o0-7 t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 1 bank 0 and 1 bank 0 or 1 no pre auto pre t ch t ah t as t cs t cs t ch t ah t as t cks t cka bank 0 bank 0 bank 1 bank 1 bank 0 bank 0 row column m row t qmd t qmd t ras t rc < act > < act > < read > < reada > < masku > < maskl > < enbu, maskl > < pall > < pre > t rcd t cac t qmd t rql t rcd t ras t rp t rp t ac t hz t oh t hz t hz t ac t ac t lz t lz t lz d out m d out m d out m+2 d out m+1 d out m+3 t oh t oh t ac t ac t oh row row t12
74 integrated silicon solution, inc. ? 1-800-379-4774 rev. a 03/13/00 IS42S16128 issi ? write cycle / byte operation undefined don't care cas latency = 3, burst length = 4 clk cke cs ras cas we a0-a7 a8 a9 ldqm udqm i/o8-15 i/o0-7 t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 1 bank 0 and 1 bank 0 or 1 no pre auto pre t ch t ah t as t cs t cs t ch t ah t as t cks t cka bank 0 bank 0 bank 1 bank 1 bank 0 bank 0 row column m row t ras t rc < act > < act > < writ > < writa > < mask > < maskl > < enb > < pall > < pre > t rcd t dpl t rcd t ras t rp t rp row row t dh t ds t ds t dh t ds t dh t ds d in m d in m d in m+3 t dh t dh t ds d in m+1 d in m+3 t12 t11
IS42S16128 issi ? integrated silicon solution, inc. ? 1-800-379-4774 75 rev. a 03/13/00 read cycle, write cycle / burst read, single write undefined don't care cas latency = 3, burst length = 2 column n clk cke cs ras cas we a0-a7 a8 a9 dqm i/o t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t ck t chi t cl t ch t cs t ch t cs t ch t cs t ch t cs t ah t as bank 1 bank 0 and 1 bank 0 or 1 no pre no pre auto pre t ch t ah t as t cs t ah t as t cks t cka bank 0 bank 0 bank 1 bank 1 bank 0 bank 1 bank 0 row column m row t qmd t hz t lz t ras t rc < act >< read > < writa > < writ > < pall > < pre > t rc t cac t dpl t rp t ac t ac t dh t ds t oh d out m t oh d out m+1 d in n t11 t12 issi ? integrated silicon solution, inc. 2231 lawson lane santa clara, ca 95054 tel: 1-800-379-4774 fax: (408) 588-0806 e-mail: sales@issi.com www.issi.com

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